4
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
Figure 1. MRFE6S9045NR1 Test Circuit Schematic
Z10 0.360″
x 0.270
″
Microstrip
Z11 0.063″
x 0.270
″
Microstrip
Z12 0.360″
x 0.065
″
Microstrip
Z13 0.095″
x 0.065
″
Microstrip
Z14 0.800″
x 0.065
″
Microstrip
Z15 0.260″
x 0.065
″
Microstrip
Z16 0.325″
x 0.065
″
Microstrip
PCB Taconic RF-35 0.030″, εr
= 3.5
Z1 0.215″
x 0.065
″
Microstrip
Z2 0.221″
x 0.065
″
Microstrip
Z3 0.500″
x 0.100
″
Microstrip
Z4 0.460″
x 0.270
″
Microstrip
Z5 0.040″
x 0.270
″
Microstrip
Z6 0.280″
x 0.270
″
x 0.530
″
Taper
Z7 0.087″
x 0.525
″
Microstrip
Z8 0.435″
x 0.525
″
Microstrip
Z9 0.057″
x 0.525
″
Microstrip
R2
VBIAS
V
+
SUPPLY
RF
Z16
OUTPUT
RF
INPUT
DUT
C3
L1
Z1
C2
Z2
Z3
C1
Z4
Z5
Z6
Z7
C4
Z8
C6
Z9
Z10
C14
C12
B1
R3
R1
L2
B2
C7
C5
C9
C8
C10 C16 C17
C18
C15
Z11 Z12 Z13 Z15Z14
C11
+
+
+
C13
Table 6. MRFE6S9045NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair Rite
B2
Ferrite Bead
2743021447
Fair Rite
C1, C7, C10, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2, C4, C12
0.8-8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C3
15 pF Chip Capacitor
ATC100B150JT500XT
ATC
C5, C6
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C8, C9
13 pF Chip Capacitors
ATC100B130JT500XT
ATC
C11
7.5 pF Chip Capacitor
ATC100B7R5JT500XT
ATC
C13
0.6-4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C15, C16, C17
10 μF, 35 V Tantalum Capacitors
T491D106K035AT
Kemet
C18
220 μF, 50 V Electrolytic Capacitor
EMVY500ADA221MJA0G
Nippon Chemi-con
L1, L2
12.5 nH Inductors
A04T-5
Coilcraft
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 kΩ, 1/4 W Chip Resistor
CRCW120656001FKEA
Vishay
R3
12 Ω,
1/4 W Chip Resistor
CRCW120612R0FKEA
Vishay
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相关代理商/技术参数
MRFE6S9045NR1-CUT TAPE
制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET
MRFE6S9046GNR1
功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9046NR1
功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9060GNR1
功能描述:射频MOSFET电源晶体管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9060NR1
功能描述:射频MOSFET电源晶体管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9060NR1-CUT TAPE
制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET
MRFE6S9125NBR1
功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9125NR1
功能描述:射频MOSFET电源晶体管 HV6E 125W
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray